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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6071/D
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. * Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions * Gate Triggering 4 Mode -- 2N6071A,B, 2N6073A,B, 2N6075A,B * Blocking Voltages to 600 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
2N6071A,B* 2N6073A,B* 2N6075A,B*
*Motorola preferred devices
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
MT1 MT2 G
MT2
G MT2 MT1
CASE 77-08 (TO-225AA) STYLE 5
MAXIMUM RATINGS (TJ = 25C unless otherwise noted.)
Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 110C) 2N6071A,B 2N6073A,B 2N6075A,B IT(RMS) ITSM I2t PGM PG(AV) VGM Symbol VDRM 200 400 600 4 30 3.7 10 0.5 5 Amps Amps A2s Watts Watt Volts Value Unit Volts
*On-State Current RMS (TC = 85C) *Peak Surge Current (One Full cycle, 60 Hz, TJ = -40 to +110C) Circuit Fusing Considerations (t = 8.3 ms) *Peak Gate Power *Average Gate Power *Peak Gate Voltage *Indicates JEDEC Registered Data.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data (c) Motorola, Inc. 1998
1
2N6071A,B 2N6073A,B 2N6075A,B
MAXIMUM RATINGS
Rating *Operating Junction Temperature Range *Storage Temperature Range Mounting Torque (6-32 Screw)(1) *Indicates JEDEC Registered Data. 1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200C, for 10 seconds. Consult factory for lead bending options. Symbol TJ Tstg -- Value -40 to +110 -40 to +150 8 Unit C C in. lb.
THERMAL CHARACTERISTICS
Characteristic *Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient *Indicates JEDEC Registered Data. Symbol RJC RJA Max 3.5 75 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic *Peak Blocking Current (VD = Rated VDRM, gate open, TJ = 25C) (TJ = 110C) *On-State Voltage (Either Direction) (ITM = 6 A Peak) *Peak Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = -40C) MT2(+), G(+); MT2(-), G(-) All Types MT2(+), G(-); MT2(-), G(+) (Main Terminal Voltage = Rated VDRM, RL = 10 k ohms, TJ = 110C) MT2(+), G(+); MT2(-), G(-) All Types MT2(+), G(-); MT2(-), G(+) *Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, TJ = -40C) (Initiating Current = 1 Adc) 2N6071A,B, 2N6073A,B, 2N6075A,B (TJ = 25C) 2N6071A,B, 2N6073A,B, 2N6075A,B Turn-On Time (Either Direction) (ITM = 14 Adc, IGT = 100 mAdc) Blocking Voltage Application Rate at Commutation @ VDRM, TJ = 85C, Gate Open, ITM = 5.7 A, Commutating di/dt = 2.0 A/ms *Indicates JEDEC Registered Data. Symbol IDRM -- -- VTM VGT -- -- 1.4 1.4 2.5 2.5 -- -- -- -- 10 2 2 Min Typ Max Unit A mA Volts Volts
0.2 0.2 IH -- -- ton dv/dt(c) -- --
-- --
-- -- mA
-- -- 1.5 5
30 15 -- -- s V/s
2
Motorola Thyristor Device Data
2N6071A,B 2N6073A,B 2N6075A,B
QUADRANT (See Definition Below) Type Gate Trigger Current (Continuous dc) Vdc, (Main Terminal Voltage = 12 Vdc RL = 100 ohms) Maximum Value 2N6071A 2N6073A 2N6075A 2N6071B 2N6073B 2N6075B *Indicates JEDEC Registered Data. IGT @ TJ +25C -40C +25C -40C I mA 5 20 3 15 II mA 5 20 3 15 III mA 5 20 3 15 IV mA 10 30 5 20
SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III
14 MC7400 4 7 VEE = 5.0 V + 2N6071A LOAD 115 VAC 60 Hz
0V
-VEE
510
QUADRANT DEFINITIONS MT2(+) QUADRANT II QUADRANT I
Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation.
MT2(+), G(-)
MT2(+), G(+)
G(-) QUADRANT III QUADRANT IV
G(+)
MT2(-), G(-) MT2(-)
MT2(-), G(+)
SENSITIVE GATE LOGIC REFERENCE
IC Logic Functions TTL Firing Quadrant I II 2N6071A Series 2N6071A Series 2N6071B Series 2N6071B Series 2N6071A Series 2N6071A Series 2N6071A Series 2N6071B Series 2N6071A Series III 2N6071A Series 2N6071A Series 2N6071B Series IV
HTL
CMOS (NAND)
CMOS (Buffer)
Operational Amplifier Zero Voltage Switch
Motorola Thyristor Device Data
3
2N6071A,B 2N6073A,B 2N6075A,B
FIGURE 1 - AVERAGE CURRENT DERATING
110 110
FIGURE 2 - RMS CURRENT DERATING
= 30 60 90 100
TC , CASE TEMPERATURE ( C)
100 = 30 60 90 90 120 180 dc 80 70 = CONDUCTION ANGLE 0 1.0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 4.0
TC , CASE TEMPERATURE ( C)
90
120 180
80 70
dc
= CONDUCTION ANGLE 0 1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 4.0
FIGURE 3 - POWER DISSIPATION
8.0 P(AV) , AVERAGE POWER (WATTS) 6.0 = CONDUCTION ANGLE 60 4.0 = 30 90 180 120 dc P(AV) , AVERAGE POWER (WATTS) 6.0 8.0
FIGURE 4 - POWER DISSIPATION
= 180 120 4.0
dc
= CONDUCTION ANGLE
2.0
2.0 90 0
30 60
0 0 2.0 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 1.0 4.0
0
1.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMP)
4.0
FIGURE 5 - TYPICAL GATE-TRIGGER VOLTAGE
VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 3.0 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES I GTM , GATE TRIGGER CURRENT (NORMALIZED) 3.0 2.0
FIGURE 6 - TYPICAL GATE-TRIGGER CURRENT
OFF-STATE VOLTAGE = 12 Vdc ALL MODES
1.0 0.7 0.5
1.0 0.7 0.5
0.3 -60
-40
-20
0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C)
120
140
0.3 -60
-40
-20
0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C)
120
140
4
Motorola Thyristor Device Data
2N6071A,B 2N6073A,B 2N6075A,B
FIGURE 7 - MAXIMUM ON-STATE CHARACTERISTICS
40 30 20 IH, HOLDING CURRENT (NORMALIZED) 3.0 2.0
FIGURE 8 - TYPICAL HOLDING CURRENT
GATE OPEN APPLIES TO EITHER DIRECTION
1.0 0.7 0.5
10 7.0 ITM , ON-STATE CURRENT (AMP) 5.0 TJ = 110C
0.3 -60
-40
-20
0
20
40
60
80
100
120
140
3.0 2.0
TJ, JUNCTION TEMPERATURE (C)
TJ = 25C 1.0
FIGURE 9 - MAXIMUM ALLOWABLE SURGE CURRENT
34 32 PEAK SINEWAVE CURRENT (AMP)
0.7 0.5
30 28 26 24 22 20 18 16 14 1.0 TJ = -40 to +110C f = 60 Hz
0.3 0.2
0.1 0 1.0 2.0 3.0 4.0 5.0 VTM, ON-STATE VOLTAGE (VOLTS)
2.0
3.0
4.0
5.0
7.0
10
NUMBER OF FULL CYCLES
Z JC(t), TRANSIENT THERMAL IMPEDANCE (C/W)
FIGURE 10 - THERMAL RESPONSE
10 5.0 3.0 2.0 TYPICAL 1.0 0.5 0.3 0.2 0.1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k
MAXIMUM
Motorola Thyristor Device Data
5
2N6071A,B 2N6073A,B 2N6075A,B
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE
CASE 77-09 (TO-225AA) ISSUE W
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488
6
Motorola Thyristor Device Data 2N6071/D


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